IndiumV3, Russie, Analysis, bibRecord, 000160

Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs

Identifieur interne : 000160 ( Russie/Analysis ); précédent : 000159; suivant : 000161

Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs

Auteurs : RBID : Pascal:09-0105997

Descripteurs français

Pascal (Inist)
- Dépôt laser pulsé, Composition phase, Diffraction RX, Composition chimique, Effet Hall, Effet Kerr magnétooptique, Aimantation, Résonance ferromagnétique, Indium Manganèse Arséniure Mixte, Semiconducteur magnétique, Couche mince, Matériau ferromagnétique, InMnAs.

English descriptors

KwdEn :
- Chemical composition, Ferromagnetic materials, Ferromagnetic resonance, Hall effect, Indium Manganese Arsenides Mixed, Kerr magneto-optical effect, Magnetic semiconductors, Magnetization, Phase composition, Pulsed laser deposition, Thin films, XRD.

Abstract

InMnAs layers were grown in a quartz reactor by YAG: Nd pulsed laser ablation of solid targets (InAs and Mn) in hydrogen and arsine flow. The crystal quality and the phase composition were analysed by x-ray diffraction. The electrical properties were derived from the Hall effect measurements. The InMnAs magneto-optical and magnetic properties were studied by means of the Kerr effect, alternating gradient field magnetometry and ferromagnetic (FM) resonance measurements. The dependence of the electrical and magnetic properties of the layers on the Mn content was investigated. The InMnAs layers exhibit FM properties at temperatures at least up to 300 K.

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to stream Main, to step Corpus: 005A97
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Links to Exploration step

Pascal:09-0105997

Le document en format XML

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<author><name sortKey="Danilov, Yu A" uniqKey="Danilov Y">Yu A. Danilov</name>
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<country>Russie</country>
<wicri:noRegion>603950 Nizhny Novgorod</wicri:noRegion>
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<author><name sortKey="Kudrin, A V" uniqKey="Kudrin A">A. V. Kudrin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physico-Technical Research Institute of Nizhny Novgorod State University, Gagarine Av. 32/3</s1>
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<country>Russie</country>
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<author><name sortKey="Vikhrova, O V" uniqKey="Vikhrova O">O. V. Vikhrova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physico-Technical Research Institute of Nizhny Novgorod State University, Gagarine Av. 32/3</s1>
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<author><name sortKey="Zvonkov, B N" uniqKey="Zvonkov B">B. N. Zvonkov</name>
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<author><name sortKey="Drozdov, Yu N" uniqKey="Drozdov Y">Yu N. Drozdov</name>
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<author><name sortKey="Sapozhnikov, M V" uniqKey="Sapozhnikov M">M. V. Sapozhnikov</name>
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<author><name sortKey="Nicolodi, S" uniqKey="Nicolodi S">S. Nicolodi</name>
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<author><name sortKey="Zhiteytsev, E R" uniqKey="Zhiteytsev E">E. R. Zhiteytsev</name>
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<author><name sortKey="Santos, N M" uniqKey="Santos N">N. M. Santos</name>
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<author><name sortKey="Carmo, M C" uniqKey="Carmo M">M. C. Carmo</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Departamento de Física and I3N, Universidade de Aveiro</s1>
<s2>3810-193 Aveiro</s2>
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</author>
<author><name sortKey="Sobolev, N A" uniqKey="Sobolev N">N A Sobolev</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Departamento de Física and I3N, Universidade de Aveiro</s1>
<s2>3810-193 Aveiro</s2>
<s3>PRT</s3>
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<date when="2009">2009</date>
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<seriesStmt><idno type="ISSN">0022-3727</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term>
<term>Ferromagnetic materials</term>
<term>Ferromagnetic resonance</term>
<term>Hall effect</term>
<term>Indium Manganese Arsenides Mixed</term>
<term>Kerr magneto-optical effect</term>
<term>Magnetic semiconductors</term>
<term>Magnetization</term>
<term>Phase composition</term>
<term>Pulsed laser deposition</term>
<term>Thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt laser pulsé</term>
<term>Composition phase</term>
<term>Diffraction RX</term>
<term>Composition chimique</term>
<term>Effet Hall</term>
<term>Effet Kerr magnétooptique</term>
<term>Aimantation</term>
<term>Résonance ferromagnétique</term>
<term>Indium Manganèse Arséniure Mixte</term>
<term>Semiconducteur magnétique</term>
<term>Couche mince</term>
<term>Matériau ferromagnétique</term>
<term>InMnAs</term>
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<front><div type="abstract" xml:lang="en">InMnAs layers were grown in a quartz reactor by YAG: Nd pulsed laser ablation of solid targets (InAs and Mn) in hydrogen and arsine flow. The crystal quality and the phase composition were analysed by x-ray diffraction. The electrical properties were derived from the Hall effect measurements. The InMnAs magneto-optical and magnetic properties were studied by means of the Kerr effect, alternating gradient field magnetometry and ferromagnetic (FM) resonance measurements. The dependence of the electrical and magnetic properties of the layers on the Mn content was investigated. The InMnAs layers exhibit FM properties at temperatures at least up to 300 K.</div>
</front>
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<fA11 i1="01" i2="1"><s1>DANILOV (Yu A.)</s1>
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<fA11 i1="08" i2="1"><s1>ZHITEYTSEV (E. R.)</s1>
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<fA11 i1="09" i2="1"><s1>SANTOS (N. M.)</s1>
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<fA11 i1="10" i2="1"><s1>CARMO (M. C.)</s1>
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<fA11 i1="11" i2="1"><s1>SOBOLEV (N A)</s1>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>Institute for Physics of Microstructures, RAS</s1>
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<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA14 i1="03"><s1>Instituto de Física, UFRGS, Av. Bento Gonçalves 9500</s1>
<s2>91501-970 Porto Alegre, RS</s2>
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<sZ>7 aut.</sZ>
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<fA14 i1="04"><s1>Departamento de Física and I3N, Universidade de Aveiro</s1>
<s2>3810-193 Aveiro</s2>
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<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
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<fA20><s2>035006.1-035006.5</s2>
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<fA21><s1>2009</s1>
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<fA43 i1="01"><s1>INIST</s1>
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<fC01 i1="01" l="ENG"><s0>InMnAs layers were grown in a quartz reactor by YAG: Nd pulsed laser ablation of solid targets (InAs and Mn) in hydrogen and arsine flow. The crystal quality and the phase composition were analysed by x-ray diffraction. The electrical properties were derived from the Hall effect measurements. The InMnAs magneto-optical and magnetic properties were studied by means of the Kerr effect, alternating gradient field magnetometry and ferromagnetic (FM) resonance measurements. The dependence of the electrical and magnetic properties of the layers on the Mn content was investigated. The InMnAs layers exhibit FM properties at temperatures at least up to 300 K.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70E50P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70E70A</s0>
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<fC02 i1="03" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0>
<s5>02</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Pulsed laser deposition</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Composition phase</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Phase composition</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Composición fase</s0>
<s5>03</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="07" i2="3" l="ENG"><s0>Magnetization</s0>
<s5>09</s5>
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<s2>NA</s2>
<s5>14</s5>
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<fC03 i1="09" i2="X" l="ENG"><s0>Indium Manganese Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
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<fC03 i1="09" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur magnétique</s0>
<s5>15</s5>
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<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>17</s5>
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<s5>17</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InMnAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fN21><s1>075</s1>
</fN21>
</pA>
</standard>
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Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs

Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri